Capabilities
Current Capabilities
| Implanter (B, Al, N, P - 900 keV Max) |
| SiC Epitaxial Growth (Currently, n-type only) |
| Activation (1900°C Max Process Temperature) |
| Oxidation (1500°C Max Process Temperature) |
| i-Line Stepper - 0.6 μm |
| Coater/Developer/Bake |
| Wet Process Cleaning |
| PECVD (SiO2, SiN, Oxynitride) |
| LPCVD Polysilicon Deposition |
| P-Doping for Polysilicon |
| LPCVD SiO2 and BPSG Deposition |
| Anneal Furnace (1200°C Max Process Temperature) |
| Plasma Etch - SiO2 |
| Plasma Etch - Si and Limited SiC |
| Ashers |
| Ellipsometry |
| CD Vertification |
Capabilities to be Installed Through 2026
| Wet Process Semi-Automated Benches |
| Mask Aligner |
| Epi Defect Scanning |
| Rapid Thermal Annealing |
| ICP-MS |
| Plasma Metal Etch |
| Automated CV Measurement - Temperature Dependent |
| Automated Probe Stations |
| 4-Point Probe |
| Multi-Chamber PVD Sputter (Metal Deposition) |
| Multi-Chamber Metal Deposition (Sputter - 2nd Tool) |
| ICP Etcher - Multi-chamber RIE (Hardmask and SiC) |
Capabilities Under Review
| SiC Backgrinding |
| Laser Annealing |
| Contactless CV |
| Trench Gate (ALD or HTO) |
| Polyfill |
| Au/Ag/Cu Metallization |
Contact
